2
RF Device Data
Freescale Semiconductor
MRF7S21150HR3 MRF7S21150HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 348
μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, I
D
= 1350 mAdc)
VGS(Q)
?
2.7
?
Vdc
Fixture Gate Quiescent Voltage
(1)
(VDD
= 28 Vdc, I
D
= 1350 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.4
6.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2.7 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
0.9
?
pF
Output Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
590
?
pF
Input Capacitance
(VDS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
320
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1350 mA, P
out
= 44 W Avg., f = 2112.5 MHz and
f = 2167.5 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16.5
17.5
19.5
dB
Drain Efficiency
ηD
29
31
?
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.1
?
dB
Adjacent Channel Power Ratio
ACPR
?
-37
-35
dBc
Input Return Loss
IRL
?
-15
-9
dB
1. VGG
= 2 x V
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
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